Hafnium Diselenide (HfSe2)

Hafnium Diselenide (HfSe2)

Catalog Number: ACM12162219-1

CAS Number: 12162-21-9

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Description

Description HfSe2 is a semiconductor with an indirect band gap of about 1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Hafnium diselenide is a group IV transition metal dichalcogenide (TMDC)

Features And Benefits

Features And Benefits The lateral dimensions of the HfSe2 crystals we produce are about 0.6-0.8 cm, hexagonal, and have a metallic appearance.

Application

Application Hf-based TMDs are small bandgap semiconductors possessing large work functions and reasonably high mobility. They are suitable for photovoltaic and FET applications. Ultrathin nanosheets of HfSe2 can also be built into ultrafast and ultrasensitive phototransistor devices.

Specifications

Synonyms	Hafnium selenide, Bis(selanylidene)hafnium
Molecular Weight	336.43 g/mol
Purity	≥ 99.999%
Appearance	Dark brown
Bandgap	~ 1.1 eV (indirect)
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Octahedral (1T)
Dimension	~10 mm
Electrical Property	Semiconductor
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120°

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