Germanium Sulfide (GeS)

Germanium Sulfide (GeS)

Catalog Number: ACM12025320-3

CAS Number: 12025-32-0

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Description

Description GeS is a semiconductor with an indirect band gap of 1.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GeS belongs to the group 14 transition metal monochalcogenides.

Features And Benefits

Features And Benefits The GeS crystals we produce have typical lateral dimensions of about 0.6-0.8 cm, are rectangular and have a metallic appearance.

Application

Application With its advantages of high chemical and environmental stability, low cost, earth abundant and environmentally friendly elements, 2D layered germanium sulfide is a promising candidate for solar cells, photodetectors, gas sensors, batteries and light-emitting diodes applications. 2D GeS nanosheets, nanoparticles, nanoflowers and nanowires can be obtained from our high purity powder and crystals by either mechanical or liquid exfoliation or intercalation.

Specifications

Synonyms	Germanium (II) sulfide, Germanium monosulfide
Molecular Weight	104.71 g/mol
Melting Point	615 °C (lit)
Purity	≥ 99.999%
Appearance	Dark grey
Bandgap	1.65 eV (indirect)
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal monochalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
Crystal Structure And Type	Orthorhombic C
Dimension	~10 mm
Electrical Property	Semiconductor
Production Method	Chemical vapour transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°

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