GaTe Thin Film

GaTe Thin Film

Catalog Number: ACM12024145-1

CAS Number: 12024-14-5

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Description

Description We synthesized multilayer gallium telluride (GaTe) films using atomic layer deposition (ALD) growth to achieve large monodomain films with a negligible number of grain boundaries.

Features And Benefits

Features And Benefits Gate films are deposited directly on double-sided polished c-cut sapphire substrates, but can be transferred to virtually any substrate choice. The films have guaranteed PL, Raman and semiconducting responses.

Application

Application GaTe thin films are particularly suitable for thin film geometry measurements such as catalysis, photovoltaics, electron transport, etc.

Specifications

Purity	Better than 99.9999% (6N)
Bandgap	1.65 eV
Characteristics	PL, Raman and semiconducting responses. GaSe films have guaranteed PL, R
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Monoclinic(anisotropic) phase
Dimension	1cm2 size substrate and 0.5 mm2 active Gas area
Electrical Property	Direc semiconductor (bulk)
Packaging	1 piece/pack
Production Method	atomic layer deposition (ALD) technology
Substrate	Sapphire Substrate, PET Substrate, Quartz Substrate, SiO2/Si Substrate
Thickness	Layer 100nm
Type	Synthetic
Unit Cell Parameters	a=0.416; b=0.934; c=1.086 nm; α=106.5°; β=90°; γ=102.8°

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