GaS Thin Film

GaS Thin Film

Catalog Number: ACM12025320-4

CAS Number: 12025-32-0

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Description

Description Using state-of-the-art atomic layer deposition (ALD) technology, we have deposited multiple layers of gallium sulfide (GaS) onto a variety of substrates.

Features And Benefits

Features And Benefits Our films are designed to achieve single crystal quality, with single domain sizes well above 100 microns, unmatched by CVD or MOCVD techniques.

Specifications

Purity	Better than 99.9999% (6N)
Bandgap	2.55 eV
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Hexagonal phase
Dimension	1cm2 size substrate and 0.5 mm2 active Gas area
Electrical Property	Direc semiconductor (bulk)
Layers	multilayer
Packaging	1 piece/pack
Production Method	atomic layer deposition (ALD) technology
Storage Conditions	Room temperature and dry
Substrate	Sapphire Substrate, PET Substrate, Quartz Substrate, SiO2/Si Substrate
Thickness	Layer 100nm-1um
Type	Synthetic
Unit Cell Parameters	a=0.360 nm, b=0.640 nm, c=1.544 nm, α=β=90°, γ=120°

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Our Advantages

High Quality

Cost-Effective

Hassle-Free

Cost-Effective

Alfa Chemistry provides cost effective, high quality and hassle free services to our clients worldwide. We guarantee on-time delivery of our results.

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Please kindly note that our products are for research use only.