GaGeTe Crystal

GaGeTe Crystal

Catalog Number: ACMA00022932

CAS Number:

Request bulk or custom formats

ONLINE INQUIRY

Description

Description GaGeTe is a layered crystal with a unique crystal structure and exciting electronic properties. Its energy band exhibits high carrier mobility.

Features And Benefits

Features And Benefits Our GaGeTe crystals are synthesized using high pressure flux techniques to produce these unique material systems.

Application

Application These properties make this special material exciting for applications in infrared (IR) technology as well as the telecommunications range.

Specifications

Purity	99.9999% (6N)
Bandgap	0.01 eV to 0.7 eV
Characteristics	No transport agents Low defect concentration High carrier mobility
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	R3m trigonal phase
Degree Of Exfoliation	medium hard to exfoliate
Dimension	3-4 mm
Electrical Property	High mobility IR semiconductor
Production Method	High pressure growth
Type	Synthetic

The Following May Also Be of Interest to You

Indium (II) Selenide (InSe) Crystal

Cat.No. ACM1312421-2

Antimony Selenide(SbSe) Crystal

Cat.No. ACMA00022930

Copper Sulfide(CuS)

Cat.No. ACMA00022931

Gallium Sulfide Selenide(GaSSe) Crystal

Cat.No. ACMA00022933

Gallium Sulfide Telluride(GaSTe) Crystals

Cat.No. ACMA00022934

Gallium Telluride(GaTe)

Cat.No. ACMA00022935

Our Advantages

High Quality

Cost-Effective

Hassle-Free

Cost-Effective

Alfa Chemistry provides cost effective, high quality and hassle free services to our clients worldwide. We guarantee on-time delivery of our results.

If you have any questions at any time during this process, please contact us. We will do our best to meet your needs.

Please kindly note that our products are for research use only.