Full Area Coverage PdSe2 layers on Sapphire

Full Area Coverage PdSe2 layers on Sapphire

Catalog Number: ACMA00022873

CAS Number:

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Description

Description The band gap of bulk PdSe2 (palladium diselenide) is expected to be 30 meV, and the indirect band gap increases to 1.43 eV (theoretical). It has also been shown to exhibit superconductivity below ~13K under mild hydrostatic pressure, and even a semi-metallic response in bulk form.

Features And Benefits

Features And Benefits Compared to other TMDCs, PdSe2 has an unusual structure: Pd atoms coordinate with four Se atoms, forming a square backbone lattice. It has also been recently shown that the PdSe2 monolayer undergoes an immediate crystalline transition from PdSe2 to Pd2Se3. Due to the large number of Pd atoms, PdSe2 has been demonstrated theoretically and experimentally to be a catalytically active material, but fundamental research is still in its pioneering stage.

Application

Application New 2D semiconductors, topological insulators, and superconductors have numerous applications in advanced technologies, and Alfa Chemistry engineers can guide customers in material characterization and selection.

Specifications

Purity	(6N) 99.9999% confirmed
Characterization Methods	SIMS, XRD, EDS, Raman
Crystal Structure And Type	Pbca
Dimension	~5 mm
Electrical Property	CDW, superconducting, IR-VIS semiconductor, catalytic
Production Method	Flux zone growth(contamination halide free) defect free
Type	Synthetic
Unit Cell Parameters	a = 0.579 nm, b = 0.594 nm, c = 0.859 nm, α = β = γ = 90°

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