CAS 12058-20-7 Full Area Coverage CVD MoTe2 Few-layers

Description

Description Alfa Chemisry has grown MoTe2, a 2H semiconductor phase-less layer, using low pressure chemical vapor deposition (LPCVD). The grown sheets can also be transferred to other substrates such as quartz, SiO2/Si, PET, metals and others upon request.
Despite extensive R&D efforts, the environment for CVD-grown monolayer MoTe2 is rather unstable due to uncontrollable defect characteristics. We are currently unable to provide single-layer thick MoTe2.

Features And Benefits

Features And Benefits Few-layer MoTe2 achieves full-area coverage on sapphire, showing excellent environmental stability, surface smoothness, and uniformity. The grown flakes are stable in the environment and exhibit a band gap between the bulk (0.6 eV) and monolayer (1.1 eV). Our samples are always highly crystalline, highly pure and perfectly layered.

Application

Application Optoelectronic devices, microelectronic devices, biological sensing, chemical sensing and other fields.

Specifications

Purity	99.9999% (6N)
Appearance	gray and transparent
Bandgap	0.8-1.0 eV
Characterization Methods	Raman, photoluminescence, TEM, EDS
Coverage	Full-area coverage
Crystal Structure And Type	Hexagonal
Dimension	1cm x 1cm square shaped
Electrical Property	semiconductor
Layers	3-6 layers
Packaging	1 piece/pack
Production Method	Low pressure Chemical Vapor Deposition (LPCVD)
Storage Conditions	Room temperature and dry
Substrate	c-cut sapphire (double side polished), SiO2/Si, Quartz, PET polymer, Metal surfaces
Type	Synthetic
Unit Cell Parameters	a = b = 0.350 nm, c = 1.341 nm, α = β = 90, γ = 120°