CVD Sb2Te3 Films

CVD Sb2Te3 Films

Catalog Number: ACMA00024994

CAS Number:

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Description

Description Chemical vapor deposition (CVD) Sb2Te3 films have been synthesized in our facility. The CVD Sb2Te3 samples are 1x1cm2 in size and achieve full coverage. It is grown on double-sided polished sapphire by default, but can also be transferred to SiO2/Si substrates if desired.

Features And Benefits

Features And Benefits Bulk Sb2Te3 crystals are topological insulators that crystallize in orthorhombic space groups.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc

Specifications

Molecular Weight	626.32 g/mol
Canonical SMILES	[Te]=[Sb][Te][Sb]=[Te]
InChI	InChI=1S/2Sb.3Te/q2*+3;3*-2
InChI Key	RSPNQEPAQCYWKS-UHFFFAOYSA-N
Boiling Point	620 °C (1148 °F; 893 K)
Purity	(6N) 99.9999% confirmed
Appearance	Transparent
Bandgap	0.21 eV
Characterization Methods	Raman, photoluminescence, TEM, EDS
Coverage	Full coverage
Crystal Structure And Type	Trigonal phase
Dimension	1cm x 1cm
Electrical Property	Topological insulator
Orientation	(0001)
Packaging	1 piece
Production Method	Chemical vapor deposition
Storage Conditions	Room temperature and dry
Substrate	c-cut sapphire (Can be transferred onto any substrate)
Type	Synthetic
Unit Cell Parameters	a=b=0.427 nm, c=3.052 nm, α=β=90°, γ=120°

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