CVD MoSe2 FET Array

CVD MoSe2 FET Array

Catalog Number: ACMA00025002

CAS Number:

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Description

Description Alfa Chemistry produces CVD MoSe2 FET array as part of its comprehensive catalog of 2D materials. We can guide customers through material characterization and selection. Request a quote to receive pricing information based on your specifications.

Features And Benefits

Features And Benefits Device structure: Gold electrode array/CVD monolayer MoSe2 array/300nm SiO2/Si, back gate structure, 5um channel

Application

Application It is commonly used as input amplifiers in devices i.e. voltmeters, oscilloscopes, and other measuring devices, due to their high input Impedance. It is also used in radio frequency amplifiers for FM devices. It is used for mixer operation of FM and TV receiver.

Specifications

Appearance	Transparent
Characterization Methods	EDS, XRD, Raman, electrical output, transfer curve test
Composition	MoSe2
Dimension	10*10 or 15*15
Layers	Monolayer
Packaging	1 piece/pack
Production Method	chemical vapor deposition (CVD)
Storage Conditions	Room temperature and dry
Substrate	Silicon oxide
Thickness	300 nm SiO2
Type	Synthetic

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