CuIn7Se11 Crystal

CuIn7Se11 Crystal

Catalog Number: ACMA00024813

CAS Number:

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Description

Description Ternary copper indium selenide crystallizes in the CuIn7Se11 stoichiometry to form perfect van der Waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction strengths.
Our material was synthesized by the Bridgman growth technique using Cu2Se, In2Se3 and Se precursors. Each precursor is selected with a purity of 5.5N to achieve the highest grade single-phase CuIn7Se11 crystals.

Features And Benefits

Features And Benefits Pure single phase without any InSe, In2Se3, or CuSe phase formation
Large single domain size (single crystal)
Bridgman grown which means no halides (I, Br, Cl, or other agents) are present in the crystal matrix.

Application

Application Due to its high photoresponsivity and wide spectral response range, layered CuIn7Se11 has been used in electronics, photodetectors, catalysis, and energy conversion technologies.

Specifications

Synonyms	Ternary copper indium selenide
Molecular Weight	1735.832 g/mol
Purity	High purity 99.9995% or higher
Appearance	Silver to dark gray crystals
Characteristics	high photoresponsivity, wide spectral response range
Characterization Methods	SIMS, XRD, EDS, Raman
Dimension	3-4mm
Production Method	Bridgman growth technique
Storage Conditions	Room temperature and dry
Type	Synthetic

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