CuCrP2S6 Crystal

Description

Description CuCrP2S6 is a layered material that exhibits both ferromagnetic and ferroelectric (bulk multiferroic) order within the monolayer limit. CuCrP2S6 consists of a chalcogenide (sulfur) framework with octahedral sites filled with Cu, Cr, and P-P in a triangular pattern. These materials are predicted to exhibit band gap values ranging from 1.0 eV to 1.4 eV in monolayer form.

Features And Benefits

Features And Benefits Our CuCrP2S6 crystals are initially grown by a flux zone growth technique without any transport agent, so flux zone grown crystals crystallize better with fewer defects than chemical vapor transport (CVT) grown materials.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Molecular Weight	369.885622 g/mol
Purity	6N (99.9999%)
Density	2.819 g/cm³
Appearance	Silver to dark gray crystals
Bandgap	1.0 eV to 1.4 eV
Characterization Methods	Raman, photoluminescence, TEM, EDS
Crystal Structure And Type	Monoclinic
Dimension	~3-5mm in size
Electrical Property	ferroagnetic&ferroelectric
Production Method	{Defaut} Flux zone growth (highest grade) Alternative: chemical vapor transport (lower grade)
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=0.5935(6) nm, b=1.0282(2) nm, c=1.3368(13) nm; α=γ=90° , β=106.78°