CrSeBr Crystal

Description

Description CrSeBr is a layered magnetic semiconductor exhibiting highly anisotropic electronic structure. CrSeBr is a member of CrXBr (X=S, Se) layered crystals and has Pmmn orthorhombic space group crystal structure. Our CrSeBr vdW crystals have been synthesized at perfect 1:1:1 Cr:Se:Br stoichiometry to ensure perfect magnetic, electronic, and optical quality.

Features And Benefits

Features And Benefits Crystals have confirmed 99.9995% purity and excellent crystalline characteristics. CrSBr are sealed under N2 environment under low pressures to ensure these crystals come to your laboratory with the highest quality without any degradation.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Molecular Weight	37 kDa
Purity	99.9995% or higher purity
Appearance	Black crystals
Bandgap	0.78 eV
Characteristics	Environmentally stable No hidden CrSe. CrBr3, and other phases Single crystalline Perfect magnetic, electronic, and optical quality
Characterization Methods	SIMS, XRD, EDS, Raman
Crystal Structure And Type	Orthorhombic phase (Pmmn)
Dimension	Each order contains a few mm sized crystals
Electrical Property	2D magnet and narrow gap excitonic semiconductor
Production Method	Chemical vapor transport
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=0.699 nm b=0.790 nm; c=0.989 nm; α=90 β=91.01 γ=90°