CrGeTe3 Crystal

Description

Description The CrGeTe3 vdW crystal is a layered ferromagnetic semiconductor that approximates a 2D Heisenberg ferromagnet with a bulk Curie temperature (Tc) value of 65K. It exhibits layer-dependent Curie temperature, coercivity field and magnetism. Manufactured using state-of-the-art technology, our vdW magnets provide crystals of the highest magnetic quality through a slow but high-quality self-flux technique without the use of any contaminating transporters.

Features And Benefits

Features And Benefits Our CrGeTe3 crystals are grown by flux zone or chemical vapor transport techniques and are 99.9999% pure and defect free. It has a guaranteed ferromagnetic response and the highest purity and crystallinity.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Molecular Weight	507.44 g/mol
Purity	6N (99.9999%)
Density	5.59 g/cm³
Appearance	Dark gray to black metallic crystals
Bandgap	0.00 eV
Characterization Methods	SIMS, XRD, EDS, Raman
Crystal Structure And Type	Hexagonal
Dimension	~few mm
Electrical Property	2D Heisenberg ferromagnet, semiconductor
Production Method	Flux zone growth (highest quality & purity) Chemical vapor transport (may contain impurities)
Recommended Process	All of these products are handled with tools free of magnetic impurities in a non-magnetic environment using non-magnetic tweezers to ensure that intrinsic magnetism can be measured and probed with confidence.
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a=b=6.82 Å, c=20.56 Å; α=β=90.00 º, ɣ=120.00 º