BP/InSe Heterojunction

BP/InSe Heterojunction

Catalog Number: ACMA00024991

CAS Number:

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Description

Description This product is a BP/InSe heterojunction device. Size and craftsmanship can be customized.

Features And Benefits

Features And Benefits High purity and excellent electrochemical properties

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc.

Specifications

Purity	99.9999% (6N)
Appearance	Transparent
Characterization Methods	Raman, photoluminescence, TEM, EDS
Dimension	10mm*10mm
Packaging	1 piece/pack
Production Method	CVD Method
Storage Conditions	Room temperature and dry
Substrate	300nm oxide layer silicon wafer
Transfer Method	First, a thin layer of black phosphorus is peeled off to the designated electrode position, and then a few layers of InSe are peeled off to form a heterojunction.
Type	Synthetic

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