Bi2SeTe2 Crystal

Description

Description Bi2SeTe2 is a topological insulator vdW layered crystal. It has the same crystal structure as Bi2Se3 and Bi2Te3, except that the Se and Te atoms are alloyed to maintain an impressive topological insulator state comparable to Bi2Te3. Our Bi2SeTe2 crystals have been synthesized using three different methods, namely chemical vapor transport (CVT), flux region growth and Bridgman technique.

Features And Benefits

Features And Benefits Due to its high crystallinity and purity, we strongly recommend flux-zone or Bridgman growth methods as synthetic options. Our crystals have a lateral dimension of less than 1 cm, they are perfectly oriented along the 0001 direction, and they can be exfoliated.

Application

Application Energy storage, catalysis, analytical chemistry, mechanics, adsorption, biology, microelectronics, sensors, etc

Specifications

Purity	99.9999% (6N)
Appearance	Black crystals
Characterization Methods	XRD, Raman, EDX, Hall measurement
Crystal Structure And Type	Rhombohedral
Dimension	~10 mm
Electrical Property	Topological insulator, semiconductor
Orientation	(0001)
Production Method	chemical vapor transport (CVT), flux region growth and Bridgman technique.
Recommended Process	Crystals are stable in air, so special storage is not recommended.
Storage Conditions	Room temperature and dry
Type	Synthetic
Unit Cell Parameters	a = b = 0.422 nm, c = 2.954 nm, α = β = 90°, γ = 120°