Bi2Se3 Thin Film on Sapphire Substrate

Bi2Se3 Thin Film on Sapphire Substrate

Catalog Number: ACM12068698-5

CAS Number: 12068-69-8

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Description

Description Bi2Se3 film is produced with chemical vapor deposition (CVD) method, depositing monolayer or multilayer films on various substrates, such as SiO2/Si, sapphire and so on. We also supply customized Bi2Se3 products based on customers' requirements or design. Contact us and tell us your requirements.

Features And Benefits

Features And Benefits High purity and excellent electrochemical properties

Application

Application The thin films are particularly suitable for thin film geometry measurements such as catalysis, photovoltaics, electron transport, etc.

Specifications

Purity	99.9999% (6N)
Appearance	colorless and transparent
Characterization Methods	Raman, photoluminescence, TEM, EDS
Dimension	The sustrate size is 10mm*10mm, film covers the full area.
Layers	single-layer, double-layer and multi-layer
Packaging	1 piece/pack
Production Method	chemical vapor deposition (CVD)
Storage Conditions	Room temperature and dry
Substrate	single-side polished C-plane sapphire. Option of double-side polished sapphire available upon request.
Type	Synthetic

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Please kindly note that our products are for research use only.