As2S3 Crystal

As2S3 Crystal

Catalog Number: ACMA00024777

CAS Number:

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Description

Description In bulk form, As2S3 is a direct bandgap semiconductor with a bandgap of about 2.5 eV. Similar to molybdenum disulfide, it has a layered structure (lamellar) with weak interlayer coupling and can be separated into monolayers.
This As2S3 crystal has a perfect 2:3 stoichiometric ratio. After multiple growth trials, perfect stoichiometry, large domain size, minimal defect density (1 part in 100,000 unit cells), and perfect purity level (99.9998%) were achieved.

Features And Benefits

Features And Benefits Our crystals show remarkable PL properties.
Our crystals are grown within 8 weeks using state-of-the-art growth techniques and display high crystallinity. Raman spectra show very clear and distinct modes with FWHM less than 6cm-1.

Application

Application As2S3 comes ready for exfoliation and is ideal for 2D research.

Specifications

Synonyms	Arsenic Sulfide
Molecular Weight	246.02 g/mol
Boiling Point	310 °C (590 °F; 583 K)
Melting Point	707 °C (1305 °F; 980 K)
Purity	Semiconductor grade (6N) 99.9999%
Density	3.43 g/cm3
Solubility	soluble in ammonia
Appearance	yellow crystals
Bandgap	~2.2 eV in bulk
Characteristics	PL properties
Characterization Methods	SIMS, XRD, EDS, Raman
Crystal Structure And Type	monoclinic P21/c
Degree Of Exfoliation	Easy to exfoliate
Dimension	~1 cm in size
Electrical Property	direct bandgap semiconductor
Layers	Exfoliates to monolayers
Magnetic Susceptibility	-70.0·10-6 cm3/mol
Orientation	(0001)
Production Method	Bridgman-Stockbarger
Storage Conditions	Room temperature and dry
Thickness	monolayer 0.8 nm
Type	Synthetic
Unit Cell Parameters	a = 1147.5(5) pm, b = 957.7(4) pm, c = 425.6(2) pm;α = 90°, β = 90.68(8)°, γ = 90°

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