2H Tungsten Disulfide (WS2)

2H Tungsten Disulfide (WS2)

Catalog Number: ACM12138099-47

CAS Number: 12138-09-9

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Description

Description 2H-WS2 is a semiconductor with an indirect band gap of about 1.3 eV. The monolayer 2H-WS2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten disulfide is a group VI transition metal dichalcogenide (TMDC).

Features And Benefits

Features And Benefits The 2H-phase WS2 crystals produced at HQ Graphene have typical lateral dimensions of about 0.8-1 cm, are hexagonal and have a metallic appearance. 2H WS2 is an n-type semiconductor with a typical charge carrier density of about 1014 cm-3 at room temperature.

Application

Application In the form of single or few-layer thin films, exfoliated WS2 nanosheets find applications ranging from light emitters, field effect transistors (FETs) and photovoltaics. Like many other TMDCs, they are actively used in condensed matter physics and photonics research.

Specifications

Synonyms	Tungsten sulphide, Tungsten sulfide, Tungsten (IV) sulfide
Molecular Weight	247.97 g/mol
Melting Point	1250 °C (lit.)
Purity	>99.995 %
Appearance	Black
Bandgap	1.4 - 2.01 eV
Characterization Methods	XRD, Raman, EDX
Classification	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science
Crystal Structure And Type	Hexagonal
Dimension	~10 mm
Electrical Property	Semiconductor, n-type
Production Method	Chemical Vapour Transport (CVT)
Type	Synthetic
Unit Cell Parameters	a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°

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