2D MBE MoSe2

2D MBE MoSe2

Catalog Number: ACM12058183-8

CAS Number: 12058-18-3

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Description

Description The product is a MoSe2 monolayer grown by molecular beam epitaxy (MBE). Typical MBE growth on double-sided polished c-cut sapphire yields monolayer-thick MoSe2 isolated triangles. Currently, MBE MoSe2 is only available on sapphire substrates, but in the near future our MBE substrates will also include mica, graphite and gold.

Features And Benefits

Features And Benefits MBE growth of MoSe2 monolayers take place in a MBE chamber at a base pressure of 8E-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection.

Application

Application MoSe2 monolayer films can be used for research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies.

Specifications

Molecular Weight	253.86 g/mol
Purity	> 99%
Appearance	colorless and transparent
Bandgap	1.41 - 1.58 eV
Characterization Methods	Raman, photoluminescence, TEM, EDS
Classification	Transition metal trichalcogenides (TMTCs), 2D semiconductor materials, nano-electronics, nano-photonics, photovoltaic, materials science
Coverage	> 95%
Dimension	1 cm × 1 cm or custom-made sizes
Layers	single-layer
Packaging	1 piece/pack
Production Method	molecular beam epitaxy (MBE)
Storage Conditions	Room temperature and dry
Substrate	double-side polished c-cut sapphire
Thickness	Substrate 300 µm
Transfer Method	Directly grown
Transparency	> 97%
Type	Synthetic

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Please kindly note that our products are for research use only.